MJD112_10 datasheet(1/10 Pages) STMICROELECTRONICS

номер детали	MJD112

подробное описание детали	Complementary power Darlington transistors

PDF	10 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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1 / 10 page

January 2010

Doc ID 3540 Rev 3

1/10

10

MJD112

MJD117

Complementary power Darlington transistors

Features

■ Good hFE linearity

■ High fT frequency

■ Monolithic Darlington configuration with

integrated antiparallel collector-emitter diode

Application

■ Linear and switching industrial equipment

Description

The devices are manufactured in planar

technology with “base island” layout and

monolithic Darlington configuration.

.

Figure 1.

Internal schematic diagram

TO-252

1

3

TAB

(DPAK)

R1 typ. = 15 kΩ

R2 typ. = 100 Ω

Table 1.

Device summary

Order codes

Marking

Polarity

Package

Packaging

MJD112T4

MJD112

NPN

DPAK

Tape and reel

MJD117T4

MJD117

PNP

DPAK

Tape and reel

www.st.com

Аналогичный номер детали - MJD112_10

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ON Semiconductor	MJD112-1G	101Kb / 8P	Complementary Darlington Power Transistors January, 2006 ??Rev. 7
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Аналогичное описание - MJD112_10

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MJE700	256Kb / 6P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY 1995 REV 3
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ON Semiconductor	NJVMJD112	153Kb / 10P	Complementary Darlington Power Transistors November, 2013 ??Rev. 13
ON Semiconductor	MJD112	207Kb / 11P	Complementary Darlington Power Transistors November, 2013 ??Rev. 13

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MJD112 датащи(PDF) 1 Page - STMicroelectronics

MJD112 датащи(HTML) 1 Page - STMicroelectronics

Аналогичный номер детали - MJD112_10

Аналогичное описание - MJD112_10

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