| поискавой системы для электроныых деталей |
|
MCP1824 датащи(PDF) 22 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
MCP1824 датащи(HTML) 22 Page - Microchip Technology |
|
22 / 34 page ![]() MCP1824/MCP1824S DS22070A-page 22 © 2007 Microchip Technology Inc. The maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. Equation 5-4 can be used to determine the package maximum internal power dissipation. EQUATION 5-4: EQUATION 5-5: EQUATION 5-6: 5.3 Typical Application Internal power dissipation, junction temperature rise, junction temperature, and maximum power dissipation is calculated in the following example. The power dissipation as a result of ground current is small enough to be neglected. 5.3.1 POWER DISSIPATION EXAMPLE 5.3.1.1 Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction-to-ambient for the application. The thermal resistance from junction-to-ambient (R θJA) is derived from EIA/JEDEC standards for measuring thermal resistance. The EIA/JEDEC specification is JESD51. The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors such as copper area and thickness. Refer to AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application” (DS00792), for more information regarding this subject. P DMAX () T JMAX () TAMAX () – () R θ JA --------------------------------------------------- = PD(MAX) = Maximum device power dissipation TJ(MAX) = maximum continuous junction temperature TA(MAX) = maximum ambient temperature R θJA = Thermal resistance from junction-to- ambient T JRISE () P DMAX () R θ JA × = TJ(RISE) = Rise in device junction temperature over the ambient temperature PD(MAX) = Maximum device power dissipation R θJA = Thermal resistance from junction-to- ambient T J T JRISE () T A + = TJ = Junction temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA = Ambient temperature Package Package Type = SOT-223-5 Input Voltage VIN =3.3V ± 5% LDO Output Voltage and Current VOUT =2.5V IOUT =300 mA Maximum Ambient Temperature TA(MAX) =60°C Internal Power Dissipation PLDO(MAX) =(VIN(MAX) – VOUT(MIN)) x IOUT(MAX) PLDO = ((3.3V x 1.05) – (2.5V x 0.975)) x 300 mA PLDO = 0.308 Watts TJ(RISE) =PTOTAL x RθJA TJRISE = 0.308 W x 62° C/W TJRISE =19.1°C |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |