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MCP14E3 датащи(PDF) 3 Page - Microchip Technology

номер детали MCP14E3
подробное описание детали  4.0A Dual High-Speed Power MOSFET Drivers With Enable
PDF  26 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
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MCP14E3 датащи(HTML) 3 Page - Microchip Technology

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© 2008 Microchip Technology Inc.
DS22062B-page 3
MCP14E3/MCP14E4/MCP14E5
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (VDD + 0.3V) to (GND – 5V)
Enable Voltage .............................(VDD + 0.3V) to (GND - 5V)
Input Current (VIN>VDD)................................................50 mA
Package Power Dissipation (TA = 50°C)
8L-DFN .......................................................................
Note 3
8L-PDIP ........................................................................1.10W
8L-SOIC .....................................................................665 mW
†
Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, T
A = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
VIH
2.4
1.5
—
V
Logic ‘0’, Low Input Voltage
VIL
—1.3
0.8
V
Input Current
IIN
–1
—
1
µA
0V
≤ V
IN ≤ VDD
Input Voltage
VIN
-5
—
VDD+0.3
V
Output
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—2.5
3.5
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—2.5
3.0
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—4.0
—
A
VDD = 18V (Note 2)
Latch-Up Protection With-
stand Reverse Current
IREV
—
>1.5
—
A
Duty cycle
≤ 2%, t ≤ 300 µs
Switching Time (Note 1)
Rise Time
tR
—15
30
ns
Figure 4-1, Figure 4-2
CL = 2200 pF
Fall Time
tF
—18
30
ns
Figure 4-1, Figure 4-2
CL = 2200 pF
Propagation Delay Time
tD1
—46
55
ns
Figure 4-1, Figure 4-2
Propagation Delay Time
tD2
—50
55
ns
Figure 4-1, Figure 4-2
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
VEN_H
1.60
1.90
2.90
V
VDD = 12V, LO to HI Transition
Low-Level Input Voltage
VEN_L
1.30
2.20
2.40
V
VDD = 12V, HI to LO Transition
Hysteresis
VHYST
0.10
0.30
0.60
V
Enable Leakage Current
IENBL
40
85
115
µA
VDD =12V,
ENB_A = ENB_B = GND
Propagation Delay Time
tD3
—60
—
ns
Figure 4-3
(Note 1)
Propagation Delay Time
tD4
—50
—
ns
Figure 4-3
(Note 1)
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
3: Package power dissipation is dependent on the copper pad area on the PCB.



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