IXTY1R6N50D2 datasheet(4/5 Pages) IXYS

номер детали	IXTY1R6N50D2

подробное описание детали	Depletion Mode MOSFET

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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IXTY1R6N50D2 IXTA1R6N50D2

IXTP1R6N50D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Normalized RDS(on) vs. Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

-50

-25

100

125

150

TJ - Degrees Centigrade

VGS = 0V

I D = 0.8A

Fig. 8. RDS(on) Normalized to ID = 0.8A Value

vs. Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

234

ID - Amperes

VGS = 0V

5V - - - -

TJ = 125ºC

TJ = 25ºC

Fig. 9. Input Admittance

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

0.5

1.0

VGS - Volts

TJ = 125ºC

25ºC

- 40ºC

VDS= 30V

Fig. 10. Transconductance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

234

ID - Amperes

TJ = - 40ºC

25ºC

125ºC

VDS= 30V

Fig. 12. Forward Voltage Drop of

Intrinsic Diode

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VSD - Volts

TJ = 125ºC

VGS= -10V

TJ = 25ºC

Fig. 11. Breakdown and Threshold Voltages

vs. Junction Temperature

0.8

0.9

1.0

1.1

1.2

1.3

-50

-25

100

125

150

TJ - Degrees Centigrade

VGS(off) @ VDS = 25V

BVDSX @ VGS = - 5V

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