IXTP3N50D2 datasheet(4/5 Pages) IXYS

номер детали	IXTP3N50D2

подробное описание детали	Depletion Mode MOSFET

PDF	5 Pages

Scroll/Zoom	100%

производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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4 / 5 page

IXTA3N50D2

IXTP3N50D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Normalized RDS(on) vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-50

-25

100

125

150

TJ - Degrees Centigrade

VGS = 0V

I D = 1.5A

Fig. 8. RDS(on) Normalized to ID = 1.5A Value

vs. Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

456

ID - Amperes

VGS = 0V

5V - - - -

TJ = 125ºC

TJ = 25ºC

Fig. 9. Input Admittance

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

0.5

1.0

VGS - Volts

TJ = 125ºC

25ºC

- 40ºC

VDS = 30V

Fig. 10. Transconductance

456

ID - Amperes

TJ = - 40ºC

VDS = 30V

25ºC

125ºC

Fig. 12. Forward Voltage Drop of

Intrinsic Diode

0.4

0.5

0.6

0.7

0.8

0.9

VSD - Volts

TJ = 125ºC

VGS = -10V

TJ = 25ºC

Fig. 11. Breakdown and Threshold Voltages

vs. Junction Temperature

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50

-25

100

125

150

TJ - Degrees Centigrade

VGS(off) @ VDS = 25V

BVDSX @ VGS = - 5V

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