IXYS reserves the right to change limits, test conditions, and dimensions.

IXFR40N90P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

18

30

S

R

Gi

Gate input resistance

1.5

Ω

C

iss

14

nF

C

oss

V

GS

= 0V, V

896

pF

C

rss

58

pF

t

d(on)

53

ns

t

r

50

ns

t

d(off)

77

ns

t

f

46

ns

Q

g(on)

230

nC

Q

gs

V

70

nC

Q

gd

100

nC

R

thJC

0.42

°C/W

R

thCS

0.15

°C/W

Source-Drain Diode

Characteristic Values

T

Min.

Typ.

Max.

I

S

V

40

A

I

SM

Repetitive, pulse width limited by T

JM

160

A

V

SD

I

1.5

V

t

rr

300 ns

Q

RM

1.7

μC

I

RM

14.0

A

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

I

V

ISOPLUS247 (IXFR) Outline

Resistive Switching Times

V

R

G

= 1

Ω (External)