BUJ103AD datasheet(7/12 Pages) NXP

номер детали	BUJ103AD

подробное описание детали	Silicon diffused power transistor

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производитель	NXP [NXP Semiconductors]

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7 / 12 page

9397 750 14195

Product data sheet

Rev. 01 — 14 December 2004

7 of 12

Philips Semiconductors

BUJ103AD

Silicon diffused power transistor

Package information

Epoxy meets requirements of UL94 V-0 at 1

⁄

8 inch.

VCEclamp ≤ 1000 V; VCC = 150 V; VBB = −5 V;

LB =1 µH; LC = 200 µH.

Tj ≤ Tj(max).

Fig 13. Test circuit for reverse bias safe operating area

Fig 14. Reverse bias safe operating area

Tmb ≤ 25 °C; Mounted with heatsink compound and 30 ± 5 Newton force on the center of the envelope.

(1) Ptot maximum and Ptot peak maximum lines.

(2) Second breakdown limits.

(3) I = Region of permissible DC operation.

II = Extension for repetitive pulse operation.

III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs.

Fig 15. Forward bias safe operating area

001aab999

DUT

IBon

VBB

VCC

VCEclamp

probe point

VCEclamp (V)

1000

800

400

600

200

001aac000

(A)

001aac001

10−1

10−2

102

(A)

10−3

VCEclamp (V)

103

102

(1)

100

µs

200

µs

I(3)

tp = 20 µs

duty cycle = 0.01

µs

500

µs

II(3)

III(3)

(2)

ICMmax

ICmax

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