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SC4626 датащи(PDF) 3 Page - Semtech Corporation |
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SC4626 датащи(HTML) 3 Page - Semtech Corporation |
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3 / 21 page ![]() www.semtech.com © 2009 Semtech Corp. 3 SC4626 Exceeding the absolute maximum ratings may result in permanent damage to the device and/or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not recommended. Notes: () Measured in free convection, mounted on 0mm x 0mm, 2 layer FR4 PCB shown in figure 4 with copper of oz for each layer. (2) Tested according to JEDEC standard JESD22-A4-B. Electrical Characteristics Recommended Operating Conditions VIN Supply Voltage ……………………………… 2.9 to 5.5V Maximum Output Current …………………………… .0A Temperature Range …………………………… -40 to +85˚C Thermal Resistance, Junction to Ambient() ………… 90°C/W Maximum Junction Temperature …………………… +50°C Storage Temperature Range ………………… -65 to +50 °C Thermal Information Absolute Maximum Ratings VIN Supply Voltage ……………………………… -0.3 to 6.0V LX Voltage ………….. - to V IN+V, -3V (20ns Max), 6V Max VOUT Voltage ……………………………… -0.3 to V IN+0.3V EN Voltage …………………………………. -0.3 to V IN+0.3V Peak IR Reflow temperature …………………………. 260°C ESD Protection Level(2) …………………………………. 3kV Unless specified: V IN = 5.0V; -40°C<TA<+85 °C; TJ(MAX)=25°C; Unless otherwise noted typical values are TA=+25 °C. Parameter Symbol Conditions Min Typ Max Units Under-Voltage Lockout UVLO Rising V IN 2.60 2.70 2.80 V Hysteresis 250 mV Output Voltage Tolerance() ΔV OUT V IN=3.6V to 5.0V; No Load -2.5 +2.5 % Current Limit I LIMIT Peak inductor current .5 A VIN Supply Current I Q EN= VIN, No Load 7.5 mA VIN Shutdown Current I SHDN EN= GND 0 µA High Side Switch Resistance R DSON_P I LX= 00mA 0.5 Ω Low Side Switch Resistance R DSON_N I LX= -00mA 0.25 LX Leakage Current I LK(LX) V IN=5.5V; LX=0V; EN=GND 0 µA V IN=5.5V; LX=5.0V; EN=GND -0 - Line Regulation ΔV LINE-REG V IN= 3.6 – 5.0V; IOUT=0A ±.0 % Load Regulation(2) ΔV LOAD-REG V IN= 5.0V; IOUT=0mA – .0A ±.0 % Oscillator Frequency F OSC 2.0 2.5 3.0 MHz Soft-Start Time(2) T SS 00 µs EN Input High Current I EN_HI EN=VIN -2.0 2.0 µA EN Input Low Current I EN_LO EN=GND -2.0 2.0 µA EN Input High Threshold V EN_HI .2 V EN Input Low Threshold V EN_LO 0.4 V |
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