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SST25WF080 датащи(PDF) 23 Page - Silicon Storage Technology, Inc |
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SST25WF080 датащи(HTML) 23 Page - Silicon Storage Technology, Inc |
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23 / 29 page ![]() Advance Information 8Mbit 1.8V SPI Serial Flash SST25WF080 23 ©2010 Silicon Storage Technology, Inc. S71203-03-000 04/10 DC Characteristics TABLE 10: DC Operating Characteristics Symbol Parameter Limits Test Conditions Min Typ1 1. Value characterized, not fully tested in production. Max Units IDDR Read Current 2 5 mA CE#=0.1 VDD/0.9 VDD@33 MHz, SO=open IDDR2 Read Current 4 9 mA CE#=0.1 VDD/0.9VDD@75 MHz, SO=open IDDW Program and Erase Current 6 10 mA CE#=VDD ISB Standby Current 5 20 µA CE#=VDD, VIN=VDD or VSS ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 1 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.3 V VDD=VDD Min VIH Input High Voltage 0.7 VDD VVDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min T10.0 1203 TABLE 11: Capacitance (TA = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum COUT1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Output Pin Capacitance VOUT = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T11.0 1203 TABLE 12: Reliability Characteristics Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T12.0 1203 |
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