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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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151 датащи(PDF) 90 Page - Renesas Technology Corp |
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151 датащи(HTML) 90 Page - Renesas Technology Corp |
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90 / 121 page  REJ03B0230-0110 Rev.1.10 Page 90 of 116 Sep 06, 2010 R32C/151 Group 5. Electrical Characteristics Timing Requirements (VCC = 3.0 to 5.5 V, VSS = 0 V, and Ta = Topr, unless otherwise noted) Figure 5.5 Flash Memory CPU Rewrite Mode Timing Table 5.15 Flash Memory CPU Rewrite Mode Timing Symbol Characteristics Value Unit Min. Max. tcR Read cycle time 200 ns tsu(S-R) Chip-select setup time for read 200 ns th(R-S) Chip-select hold time after read 0ns tsu(A-R) Address setup time for read 200 ns th(R-A) Address hold time after read 0ns tw(R) Read pulse width 100 ns tcW Write cycle time 200 ns tsu(S-W) Chip-select setup time for write 0ns th(W-S) Chip-select hold time after write 30 ns tsu(A-W) Address setup time for write 0ns th(W-A) Address hold time after write 30 ns tw(W) Write pulse width 50 ns Chip select Address RD t h(R-S) Read cycle t w(R) t su(S-R) t h(R-A) t su(A-R) Write cycle Chip select Address WR t h(W-S) t w(W) t su(S-W) t h(W-A) t su(A-W) t cW t cR |
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