R8C datasheet(42/57 Pages) RENESAS

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R8C/35C Group

5. Electrical Characteristics

R01DS0006EJ0100 Rev 1.00

Page 42 of 54

Aug. 24, 2010

Note:

4.2 V

≤ VCC ≤ 5.5 V and Topr = −20 to 85°C (N version) / −40 to 85°C (D version), f(XIN) = 20 MHz, unless otherwise specified.

Table 5.17

Electrical Characteristics (1) [4.2 V

≤ Vcc ≤ 5.5 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output “H”

voltage

Other than XOUT

Drive capacity High VCC = 5 V IOH =

−20 mA

VCC

− 2.0

−

VCC

Drive capacity Low VCC = 5 V

IOH =

−5 mA

VCC

− 2.0

−

VCC

XOUT

VCC = 5 V

IOH =

−200 µA1.0

−

VCC

VOL

Output “L”

voltage

Other than XOUT

Drive capacity High VCC = 5 V IOL = 20 mA

−−

2.0

Drive capacity Low VCC = 5 V

IOL = 5 mA

−−

2.0

XOUT

VCC = 5 V

IOL = 200

µA

−−

0.5

VT+-VT-

Hysteresis

INT0, INT1, INT2,

INT3, INT4,

KI0, KI1, KI2, KI3,

TRAIO, TRBO,

TRCIOA, TRCIOB,

TRCIOC, TRCIOD,

TRDIOA0, TRDIOB0,

TRDIOC0,

TRDIOD0, TRDIOA1,

TRDIOB1, TRDIOC1,

TRDIOD1, TRCTRG,

TRCCLK, ADTRG,

RXD0, RXD1, RXD2,

CLK0, CLK1, CLK2,

SSI, SCL, SDA, SSO

0.1

1.2

−

RESET

0.1

1.2

−

IIH

Input “H” current

VI = 5 V, VCC = 5.0 V

−−

5.0

µA

IIL

Input “L” current

VI = 0 V, VCC = 5.0 V

−−

−5.0

µA

RPULLUP

Pull-up resistance

VI = 0 V, VCC = 5.0 V

100

Ω

RfXIN

Feedback

resistance

XIN

−

0.3

−

Ω

RfXCIN

Feedback

resistance

XCIN

−

Ω

VRAM

RAM hold voltage

During stop mode

1.8

−−

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