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R2A20124AFP датащи(PDF) 7 Page - Renesas Technology Corp

номер детали R2A20124AFP
подробное описание детали  Synchronous Phase Shift Full-Bridge Control IC Series
PDF  13 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

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R2A20124AFP/R2A20124ASP
Preliminary
REJ03D0928-0200 Rev.2.00
Page 7 of 12
Aug 03, 2010
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Note
Power supply voltage
Vcc
20
V
1
Peak output current
Ipk-out
200
mA
2, 3
DC output current
Idc-out
50
mA
3, 4
VREF output current
Iref-out
–20
mA
3
COMP sink current
Isink-comp
2
mA
3
DELAY set current
Iset-delay
0.3
mA
3
RT set current
Iset-rt
0.3
mA
3
RAMP-SLP set current
Iset-ramp-slp
0.3
mA
3
VREF terminal voltage
Vter-ref
–0.3 to +6
V
1, 5
Terminal group 1 voltage
Vter-1
–0.3 to (Vref + 0.3)
V
1, 6
Operating junction temperature
Tj-opr
–40 to +125
°C
7
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Rated voltages are with reference to the GND or SGND pin.
2. The Rating shows the transient current when driving a capacitive load.
3. For rated currents, inflow to the IC is indicated by (+), and outflow by (–).
4. Total current of OUT-A, Out-B, OUT-C, OUT-D, OUT-E, and OUT-F must be not exceed
90 mA.
5. VREF pin voltage must not exceed VCC pin voltage.
6. Terminal group 1 is defined the pins;
REMOTE, RAMP-SLP, SEC-CONT, CS, RAMP, COMP, CS-OUT, FB(–), SS, RT, SYNC, and DELAY-1 to 3
7. Theramal resistance
ja
R2A20124AFP (40-pin); 85.3°C/W Board condition; Glass epoxy 50 mm
 50 mm  1.6 mm, 10% wiring density.
R2A20124ASP (20-pin); 120°C/W Board condition; Glass epoxy 40 mm
 40 mm  1.6 mm, 10% wiring density.



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