2SC5646

No.6606-1/6

UHFtoSBandLow-Noise

Amplifier

andOSC Applications

Features

•

Low-noise use : NF=1.5dB typ (f=2GHz).

•

High cut-off frequency : fT=10GHz typ (VCE=1V).

: fT=12.5GHz typ (VCE=3V).

•

Low operating voltage.

•

High gain :

•

Ultraminiature and thin flat leadless package

(1.4mm!0.8mm!0.6mm).

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

9V

Collector-to-Emitter Voltage

VCEO

4V

Emitter-to-Base Voltage

VEBO

2V

Collector Current

IC

30

mA

Collector Dissipation

PC

100

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=5V, IE=0

1.0

µA

Emitter Cutoff Current

IEBO

VEB=1V, IC=0

10

µA

DC Current Gain

hFE

VCE=1V, IC=5mA

100

160

Gain-Bandwidth Product

fT1VCE=1V, IC=5mA

8

10

GHz

fT2VCE=3V, IC=15mA

12.5

GHz

Output Capacitance

Cob

VCB=1V, f=1MHz

0.55

0.7

pF

Reverse Transfer Capacitance

Cre

VCB=1V, f=1MHz

0.4

pF

Forward Transfer Gain

8

9.5

dB

10.5

dB

Noise Figure

NF

VCE=1V, IC=3mA, f=2GHz

1.5

2.3

dB

Marking : NF

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6606

2SC5646

Package Dimensions

unit : mm

2159

[2SC5646]

72100 TS IM TA-2972

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Epitaxial Planar Silicon Transistor

1 : Base

2 : Emitter

3 : Collector

SANYO : SSFP

0.25

0.2

1.4

0.45

1

3

2

0.1