DMS3014SSS

Document number: DS32265 Rev. 3 - 2

2 of 6

www.diodes.com

September 2010

© Diodes Incorporated

DMS3014SSS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

100

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

1.0

-

2.2

V

Static Drain-Source On-Resistance

-

9

10

13

14

m

Ω

Forward Transfer Admittance

-

23

-

S

Diode Forward Voltage

-

0.37

0.5

V

Maximum Body-Diode + Schottky Continuous Current

-

-

5

A

-

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

-

2296

-

pF

f = 1.0MHz

Output Capacitance

-

164

-

pF

Reverse Transfer Capacitance

-

120

-

pF

Gate Resistance

0.26

1.3

2.34

Ω

-

19.3

-

nC

-

45.7

-

nC

Gate-Source Charge

-

5.0

-

nC

Gate-Drain Charge

-

2.9

-

nC

Turn-On Delay Time

-

5.5

-

ns

Turn-On Rise Time

-

24.4

-

ns

Turn-Off Delay Time

-

33.1

-

ns

Turn-Off Fall Time

-

6.6

-

ns

Notes:

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

0

10

15

20

25

30

0

0.5

1

1.5

2

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 2.0V

GS

V

= 2.2V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.5V

GS

V

= 4.0V

GS

5

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

0

1

1.5

2

2.5

3

V

= 85°C

GS

V

= 125°C

GS

V

= 25°C

GS

V

= -55°C

GS

V

= 150°C

GS

V

= 5V

DS

0.5

0

5

10

15

20

25

30