2SC5299

Ordering number : EN5293

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

11697YK (KOTO) TA-0588 No.5293-1/3

Package Dimensions

unit: mm

2039C-TO3PML

[2SC5299]

SANYO: TO3PML

1 : Base

2 : Collector

3 : Emitter

Specifications

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1500

V

Collector-to-Emitter Voltage

VCEO

800

V

Emitter-to-Base Voltage

VEBO

6V

Collector Current

IC

10

A

Collector Current (Pulse)

ICP

25

A

Collector Dissipation

PC

3.0

W

Tc=25°C

70

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Parameter

Symbol

Conditions

Ratings

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=800V, IE=0

10

µA

Collector Cutoff Current

ICES

VCE=1500V, RBE=0

1.0

mA

Collector Sustain Voltage

VCEO(SUS)

IC=100mA, IB=0

800

V

Emitter Cutoff Current

IEBO

VEB=4V, IC=0

1.0

mA

C-E Saturation Voltage

VCE(sat)

IC=8A, IB=2A

5

V

B-E Saturation Voltage

VBE(sat)

IC=8A, IB=2A

1.5

V

DC Current Gain

hFE(1)

VCE=5V, IC=1A

20

30

hFE(2)

VCE=5V, IC=8A

4

7

Storage Time

tstg

IC=6A, IB1=1.2A, IB2=–2.4A

3.0

µs

Fall Time

tf

IC=6A, IB1=1.2A, IB2=–2.4A

0.1

0.2

µs

Features

• High Speed : tf=100ns typ.

• High Breakdown voltage : VCBO=1500V.

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.