2SA1875 / 2SC4976

No.5507-1/5

Features

•

High fT : fT=400MHz(typ).

•

High breakdown voltage : VCEO≥200V(min).

•

Large current capacitance.

•

Small reverse transfer capacitance and excellent high

-frequency characteristic :

Cre=3.4pF(NPN), 4.2pF(PNP).

•

Adoption of FBET process.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN5507B

2SA1875 / 2SC4976

High-Definition CRT Display

Video Output Applications

52101 TS IM TA-9766

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP / NPN Epitaxial Planar Silicon Transistors

Package Dimensions

unit : mm

2045B

unit : mm

2044B

[2SA1875 / 2SC4976]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

5.0

6.5

0.85

0.7

0.6

0.5

1.2

2.3

0.5

1

23

4

2.3

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

6.5

2.3

0.5

5.0

0.85

0.5

1.2

0 to 0.2

2.3

2.3

0.6

12

4

3

[2SA1875 / 2SC4976]