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SAP08 датащи(PDF) 3 Page - Sanken electric

номер детали SAP08
подробное описание детали  Darlington transistors with built-in temperature compensation diodes for audio amplifier applications
PDF  6 Pages
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производитель  SANKEN [Sanken electric]
домашняя страница  http://www.sanken-ele.co.jp/en
Logo SANKEN - Sanken electric

SAP08 датащи(HTML) 3 Page - Sanken electric

  SAP08 Datasheet HTML 1Page - Sanken electric SAP08 Datasheet HTML 2Page - Sanken electric SAP08 Datasheet HTML 3Page - Sanken electric SAP08 Datasheet HTML 4Page - Sanken electric SAP08 Datasheet HTML 5Page - Sanken electric SAP08 Datasheet HTML 6Page - Sanken electric  
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Di VF
TR VBE
Variations
Variations
VBE
VBE Min.
(P and N: hFE Max.)
VBE Max.
(P and N: hFE Min.)
IC
40mA
∆VF=500mV
2. External Variable Resistor
Total forward voltage (at IF =2.5mA) of the diodes is designed to be equal or less than that of total VBE (at IC
= 40mA) of the transistor, thus the idling current is required to be adjusted at 40mA with an additional
external variable resistor.
The relations are shown as below:
Total VF of Diode
Total VBE of Transistor + Total VRE of Emitter Resistor
∆V=0 to 500mV
The VBE of the transistor is dependent to the hFE, and the VBE is lower with higher hFE and vice versa. The
hFE for both the PNP and the NPN varies between 5k and 20k; thus the VBE is the lowest with the
combination of maximum hFE (20k) each and it is the highest with the combination of minimum hFE (5k)
each.
Presuming the voltage difference between the VF of the diodes and the VBE of the transistors (including the
total voltage drops of the two emitter resistors) as
∆V.
Minimum VBE – Maximum VF variations of the diodes = 0
Maximum VBE – Minimum VF variations of the diodes = 500mV
The current flowing over the diodes and the VR is adjusted at 2.5mA; therefore
500mV
2.5mA = 200
Consequently, the applicable VR value is to be 0 to 200



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