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S1T8825X01-R0B0 датащи(PDF) 3 Page - Samsung semiconductor

номер детали S1T8825X01-R0B0
подробное описание детали  1.1GHZ DUAL PLL
PDF  16 Pages
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производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S1T8825X01-R0B0 датащи(HTML) 3 Page - Samsung semiconductor

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1.1GHZ DUAL PLL
S1T8825
3
PRELIMINARY ( VER.2.1 )
PIN DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Pin No.
Symbol
I/O
Description
1
Fin1
I
Input terminal of channel 1 RF signal.
2, 15
Vcc
−
Power supply voltage input. PIN2 and PIN15 are connected together.
3
CP1
O
Output terminal of channel 1 charge pump. Charge pump is constant current output
circuit, and output current is selected by input serial data.
4, 13
GND
−
Terminal of GND. PIN4 and PIN13 are connected together.
5
LD
O
Output terminal of lock detection. It is the open drain output.
6
CK
I
Input terminal of clock.
7
DATA
I
Input terminal of data.
8
EN
I
Input terminal of enable signal.
9
BO
O
Output terminal of buffer amplifier. The signal of local oscillation is output through the
buffer amplifier.
10
OSCO
O
Output terminal of local oscillation signal.
11
OSCI
I
Input terminal of local oscillation signal.
In case of external input, connecting it to this terminal.
12
SW
O
Switch-over terminal for the time constant of loop filter. It is an open drain output.
If you don’t switch the time constant of loop filter, general output is available.
14
CP2
0
Output terminal of channel 2 charge pump. Charge pump is a constant current output
circuit, and the output current is selected by input serial data.
16
Fin2
I
Input terminal of channel 2 RF signal.
Characteristic
Symbol
Value
Unit
Power Supply Voltage
Vcc
6
V
Power Dissipation
PD
600
mW
Operating temperature
TOPR
−30 — +85
°C
Storage temperature
TSTG
−55 — +150
°C
Take care ! ESD sensitive device



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