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KA8501 датащи(PDF) 2 Page - Samsung semiconductor

номер детали KA8501
подробное описание детали  SPEECH NETWORK WITH DIALER INTERFACE
PDF  4 Pages
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производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KA8501 датащи(HTML) 2 Page - Samsung semiconductor

  KA8501 Datasheet HTML 1Page - Samsung semiconductor KA8501 Datasheet HTML 2Page - Samsung semiconductor KA8501 Datasheet HTML 3Page - Samsung semiconductor KA8501 Datasheet HTML 4Page - Samsung semiconductor  
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KA8501A
SPEECH NETWORK WITH DIALER INTERFACE
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (Ta = 25
°C)
Characteristic
Symbol
Value
Unit
Line Voltage (3msec max)
Forward Line Current
Reverse Line Current
Power Dissipation (Ta = 70
°C)
Operating Temperature
Storage Temperature
VL
ILF
ILR
PD
TOPR
TSTG
22
150
-150
1
- 45 ~ + 70
- 65 ~ + 150
V
mA
mA
W
°C
°C
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
IL = 12mA
3.9
-
4.7
Line Voltage
VL
Ta = 25
°C
IL = 20mA
-
-
5.5
V
IL = 80mA
-
-
12.2
Common Mode Rejection Ratio
CMRR
f = 1KHz, IL = 12 ~ 80mA
50
-
-
dB
Line Matching Impedance
ZL
VRI = 0.3V, IL = 12 ~ 80mA
f = 1KHz
500
600
700
Ω
IL = 25mA
48
49
50
TX Gain
GV (TX)
IL = 52mA
44
45
46
dB
IL = 25 ~ 52mA
48
49
50
TX Gain Flatness
∆ G
V (TX)
VMI = 2mV, fref = 1KHz
IL = 12 ~ 80mA
-
-
± 1
dB
f = 1KHz
VSO = 1V
-
-
2
IL = 16 ~ 80mA
VSO = 1.3V
-
-
10
TX Noise
VNO (TX)
VMI = 0V, IL = 40mA
-
-
-70
dBmp
Side Tone
GV (ST)
Ta = 25
°C, f= 1KHz
IL = 25 ~ 52mA
-
-
36
dB
MIC Input Impedance
ZI (MIC)
VMI = 2mV, IL = 12 ~ 80mA
40
-
-
K
Ω
IL = 25mA
- 30
-
-
IL = 52mA
- 30
-
-
IL = 25mA
7
8
9
RX Gain
GV (RX)
IL = 52mA
2.5
3.5
4.5
dB
IL = 25 ~ 52mA
7
8
9
Tx Loss in MF Operation
TX Distortion
THD TX
GV (LOSS)
VMI = 2mV
Ta = 25
°C
VRI = 0.3V
f = 1KHz
Ta = 25
°C
f = 1KHz
VMI = 2mV
%
dB



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