FMS4 datasheet(1/1 Pages) ROHM

номер детали	FMS4

подробное описание детали	General purpose (dual transistors)

PDF	1 Pages

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производитель	ROHM [Rohm]

домашняя страница	http://www.rohm.com

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FMS3 / FMS4 / IMT4

Transistors

General purpose (dual transistors)

FMS3 / FMS4 / IMT4

!Features

1) Two 2SA1514K chips in an AMT package.

2) High breakdown voltage.

!

!Absolute maximum ratings

(Ta=25

°C)

Parameter

Symbol

VCBO

VCEO

VEBO

IC

Pc

Tj

Tstg

Limits

−120

−5

−50

300 (TOTAL)

150

−55∼+150

Unit

V

mA

mW

∗

˚C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Storage temperature

∗200mW per element must not be exceeded.

!

!Package, marking, and Packaging specifications

FMS3

SMT5

S3

T148

3000

FMS4

SMT5

S4

T148

3000

IMT4

SMT6

T4

T108

3000

Part No.

Package

Marking

Code

Basic ordering unit (pieces)

!

!Circuit diagram

FMS3

FMS4

IMT4

!

!External dimensions

(Units : mm)

ROHM : SMT5

EIAJ : SC-74A

IMT4

FMS4

FMS3

Each lead has same dimensions

0.3to0.6

1.6

2.8

ROHM : SMT5

EIAJ : SC-74A

Each lead has same dimensions

0.3to0.6

1.6

2.8

ROHM : SMT6

EIAJ : SC-74

Each lead has same dimensions

0.3to0.6

2.8

1.6

!

!Electrical characteristics

(Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

−120

−5

−

−0.5

V

µA

V

IC=

−50µA

IC

=

−1mA

IE

=

−50µA

VCB

=

−100V

VEB

=

−4V

IC/IB

=

−10mA/−1mA

hFE

180

−

820

−

VCE

=

−6V, IC−2mA

Transition frequency

fT

−

140

−

MHz

∗

VCE

=

−12V, IE=2mA, f=100MHz

∗Transition frequency of the device.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

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