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Preliminary
4-200
RF2368
Rev A0 010503
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
VDC
Input RF Level
+10
dBm
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Operating Range
Overall Frequency Range
1800
2000
MHz
Supply Voltage (VCC)
2.7
2.78
2.86
V
VCC1,VCC2
Power Down Voltage (VBIAS)
2.7
2.78
2.86
V
BIAS
Logic Control Voltage Level
0
2.86
V
SELECT
Operating Ambient Temperature
-40
+85
°C
Input Impedance
50
Ω
Output Impedance
50
Ω
1850 MHz Performance
High Gain Mode
T = 25°C, RF = 1850MHz, VCC=BIAS=2.78V,
SELECT = 0V, ZIN=ZO=50Ω
Gain
17
18
19
dB
Gain Variation Over
Temperature Range
+0.5
dB
Gain Variation Over
Frequency Band
+0.5
dB
Current Consumption
9.0
9.5
mA
ICC+IBIAS
Noise Figure
1.6
1.7
dB
Reverse Isolation
15
20
dB
Input IP3
0.0
+1.0
dBm
Input P1dB
-13
-10
dB
1850 MHz Performance
Bypass Mode
T = 25°C, RF = 1850MHz, VCC =2.78V,
SELECT = 2.7V, ZIN=ZO=50Ω
Gain
-4.5
dB
Gain Reduction
21
22.5
24
dBc
Power Down Current
10
µA
Input IP3
12
15.0
dBm
Input P1dB
+5
+8
dB
1960 MHz Performance -
High Gain Mode
T = 25°C, RF = 1960MHz, VCC=BIAS=2.78V,
SELECT = 0V, ZIN=ZO=50Ω
Gain
15.5
16.5
17.5
dB
Gain Variation Over
Temperature Range
+0.5
dB
Gain Variation Over
Frequency Band
+0.5
dB
Current Consumption
9.0
9.5
mA
ICC+IBIAS
Noise Figure
1.6
1.7
dB
Reverse Isolation
15
20
dB
Input IP3
+1
+2
dBm
Input P1dB
-13
-10
dB
1960 MHz Performance -
Bypass Mode
T = 25°C, RF = 1960MHz, VCC =2.78V,
SELECT = 2.7V, ZIN=ZO=50Ω
Gain
-5
dB
Gain Reduction
20
21.5
23
dBc
Power Down Current
10
µA
Input IP3
14.0
17.0
dBm
Input P1dB
+5
+8
dB
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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