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GTL2000 датащи(PDF) 7 Page - NXP Semiconductors |
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GTL2000 датащи(HTML) 7 Page - NXP Semiconductors |
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7 / 13 page ![]() Philips Semiconductors Product data GTL2000 22-bit bi-directional low voltage translator 2003 Apr 01 7 RECOMMENDED OPERATING CONDITIONS LIMITS SYMBOL PARAMETER CONDITIONS Min Max UNIT VI/O Input/output voltage (Sn, Dn) 0 5.5 V VSREF DC source reference voltage1 0 5.5 V VDREF DC drain reference voltage 0 5.5 V VGREF DC gate reference voltage 0 5.5 V IPASS Pass transistor current — 64 mA Tamb Operating ambient temperature range In free air -40 +85 °C NOTE: 1. VSREF ≤ VDREF - 1.5 V for best results in level shifting applications. ELECTRICAL CHARACTERISTICS OVER RECOMMENDED OPERATING FREE-AIR TEMPERATURE RANGE (unless otherwise noted) LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP1 MAX UNIT VOL Low level output voltage VDD = 3.0 V; VSREF = 1.365 V; VSn or VDn = 0.175 V; Iclamp = 15.2 mA — 260 350 mV VIK Input clamp voltage II = -18 mA VGREF = 0 — — -1.2 V IIH Gate input leakage VI = 5 V VGREF = 0 — — 5 µA CI(GREF) Gate capacitance VI = 3 V or 0 — 97.4 — pF CIO(OFF) Off capacitance VO = 3 V or 0 VGREF = 0 — 7.4 — pF CIO(ON) On capacitance VO = 3 V or 0 VGREF = 3 V — 18.6 — pF VGREF = 4.5 V — 3.5 5 VGREF = 3 V — 4.4 7 Ω VI = 0 VGREF = 2.3 V IO = 64 mA — 5.5 9 Ω I VGREF = 1.5 V — 67 105 ron2 On-resistance VGREF = 1.5 V IO = 30 mA — 9 15 Ω VGREF = 4.5 V — 7 10 VI = 2.4 V VGREF = 3 V IO = 15 mA — 58 80 Ω VI = 1.7 V VGREF = 2.3 V O — 50 70 NOTES: 1. All typical values are measured at Tamb = 25 °C 2. Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch. On-state resistance is determined by the lowest voltage of the two (Sn or Dn) terminals. |
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