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Preliminary
4-20
RF2046
Rev A5 010110
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Current
75
mA
Input RF Power
+15
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VD=3.5V, ICC=35mA
Frequency Range
DC to 3000
MHz
Gain
22.9
dB
Freq= 100MHz
22.2
dB
Freq= 1000MHz
18
20.8
dB
Freq=2000MHz
19.2
dB
Freq= 3000MHz
Gain Flatness
±1.1
dB
100MHz to 2000MHz
Noise Figure
3.8
dB
Freq= 2000MHz
Input VSWR
1.7:1
In a 50
Ω system, DC to 3000MHz
Output VSWR
1.7:1
In a 50
Ω system, DC to 3000MHz
Output IP3
+23
dBm
Freq=2000MHz±100kHz, PTONE=-18dBm
Output P1dB
+12.1
dBm
Freq=2000MHz
Reverse Isolation
23.2
dB
Freq=2000MHz
Thermal
ICC=35mA, PDISS=120mW
ThetaJC
199
°C/W
Maximum junction temperature
109
°C
Mean Time Between Failures
2.0x104
years
TAMB=+85°C
Mean Time Between Failures
1.4x107
years
TAMB=+25°C
Mean Time Between Failures
5.3x1011
years
TAMB=-40°C
Power Supply
With 22
Ω bias resistor
Operating Voltage
3.0
3.5
4.0
V
At pin 3 with ICC=35mA
Operating Current
35
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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