BCV65

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Product data sheet

Rev. 4 — 27 July 2010

2 of 11

NXP Semiconductors

BCV65

NPN/PNP general-purpose transistor

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BCV65

-

plastic surface-mounted package; 4 leads

SOT143B

Table 4.

Marking codes

Type number

Marking code[1]

BCV65

97*

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

-

30

V

collector-emitter voltage

open base

-

30

V

collector current

-

100

mA

peak collector current

-

200

mA

peak base current

-

200

mA

Per device

total power dissipation

250

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C