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NTGS3441B датащи(PDF) 2 Page - ON Semiconductor

номер детали NTGS3441B
подробное описание детали  Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6
PDF  6 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTGS3441B датащи(HTML) 2 Page - ON Semiconductor

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THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction-to-Ambient – Steady State (Note 3)
RqJA
110
°C/W
Junction-to-Ambient – t
v 5 s (Note 3)
RqJA
80
Junction-to-Ambient – Minimum Pad (Note 4)
RqJA
190
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = -250 mA
-20
V
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = -20 V
TJ = 25°C
-1.0
mA
TJ = 70°C
-5.0
Gate-to-Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8 V
$0.1
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250 mA
-0.4
-0.9
V
Drain-to-Source On Resistance
RDS(on)
VGS = -4.5 V, ID = -3.0 A
59
90
m
W
VGS = -2.5 V, ID = -2.4 A
79
130
Forward Transconductance
gFS
VDS = -10 V, ID = -3.0 A
5.8
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = -10 V
630
pF
Output Capacitance
COSS
93
Reverse Transfer Capacitance
CRSS
49
Total Gate Charge
QG(TOT)
VGS = -4.5 V, VDS = -10 V;
ID = -3.0 A
6.1
9.0
nC
Threshold Gate Charge
QG(TH)
0.5
Gate-to-Source Charge
QGS
1.0
Gate-to-Drain Charge
QGD
1.4
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
td(ON)
VGS = -4.5 V, VDS = -10 V,
ID = -1.0 A, RG = 6.0 W
8.0
13
ns
Rise Time
tr
6.0
10
Turn-Off Delay Time
td(OFF)
40
64
Fall Time
tf
33
53
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = -1.6 A
TJ = 25°C
-0.8
-1.2
V
Reverse Recovery Time
tRR
VGS = 0 V, dISD/dt = 100 A/ms,
IS = -1.6 A
12
24
ns
5. Pulse Test: pulse width
v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures



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