DTC114TKA

NPN Digital Transistor

Features

•

Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

•

The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

•

Only the on/off conditions need to be set for operation, making

device design easy

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base voltage

5

V

Collector Current-Continuous

100

mA

Collector Dissipation

200

mW

Junction Temperature

150

℃

Storage Temperature Range

-55~150

℃

Electrical Characteristics

Sym

Parameter

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

50

---

---

V

Collector-Emitter Breakdown Voltage

50

---

---

V

Emitter-Base Breakdown Voltage

5

---

---

V

Collector Cut-off Current

---

---

0.5

uA

Emitter Cut-off Current

DC Current Gain

100

300

600

---

Collector-Emitter Saturation Voltage

---

---

0.3

V

Input Resistor

7

10

13

KΩ

Transition Frequency

---

250

---

MHz

omponents

20736 Marilla

Street Chatsworth



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MCC

Revision: 1

2005/06/29

---

---

0.5

uA

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.113

.117

2.87

2.97

B

.108

.112

2.75

2.85

C

.061

.065

1.55

1.65

D

.036

.038

.925

.975

E

.073

.077

1.85

1.95

G

.0016

.0039

.04

.100

H

.044

.049

1.12

1.25

J

.006

.007

.14

.17

K

.013

.015

.34

.37

A

B

C

D

E

G

H

J

K

Suggested Solder

Pad Layout

.087

2.200

inches

mm

.031

.800

.035

.900

.037

.950

.037

.950

DIMENSIONS

SOT-23-3L

3

1

2

1. Base

2. Emitter

3. Collector

TM

Micro Commercial Components