MMDF2N02ER2G datasheet(2/7 Pages) ONSEMI

2 / 7 page

MMDF2N02E

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

V(BR)DSS

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc

VGS(th)

1.0

2.0

3.0

Vdc

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 2.2 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

−

0.083

0.110

0.100

0.200

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

1.0

2.6

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

380

532

Output Capacitance

Coss

−

235

329

Transfer Capacitance

Crss

−

110

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc, RG = 6.0 W)

td(on)

−

7.0

Rise Time

−

Turn−Off Delay Time

td(off)

−

Fall Time

−

Turn−On Delay Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc, RG = 9.1 W)

td(on)

−

Rise Time

−

Turn−Off Delay Time

td(off)

−

Fall Time

−

Gate Charge

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

−

10.6

−

1.3

−

2.9

−

2.7

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 2)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

−

1.0

1.4

Vdc

Reverse Recovery Time

See Figure 11

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

Reverse Recovery Storage Charge

QRR

−

0.03

−

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

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