MBR3045ST datasheet(1/5 Pages) ONSEMI

номер детали	MBR3045ST

подробное описание детали	SWITCHMODE??Power Rectifier

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производитель	ONSEMI [ON Semiconductor]

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May, 2008 − Rev. 7

1

Publication Order Number:

MBR3045ST/D

MBR3045ST,

MBRB3045CT-1

SWITCHMODE™

Power Rectifier

Features and Benefits

• Dual Diode Construction — Terminals 1 and 3 May Be Connected

for Parallel Operation at Full Rating

• 45 V Blocking Voltage

• Low Forward Voltage Drop

• 175°C Operating Junction Temperature

• Pb−Free Packages are Available

Applications

• Power Supply − Output Rectification

• Power Management

• Instrumentation

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight (Approximately): 1.9 Grams (TO−220AB)

1.5 Grams (TO−262)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260

°C Max. for 10 Seconds

• Epoxy Meets UL 94 V−0 @ 0.125 in

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

45

V

Average Rectified Current

Per Device

(TC = 130°C)

Per Diode

IF(AV)

30

15

A

Peak Repetitive Forward Current, per Diode

(Square Wave, VR = 45 V, 20 kHz)

IFRM

30

A

Non−Repetitive Peak Surge Current (Surge

Applied at Rated Load Conditions,

Halfwave, Single Phase, 60 Hz)

IFSM

150

A

Peak Repetitive Reverse Current, per Diode

(2.0 ms, 1.0 kHz)

IRRM

2.0

A

Storage Temperature Range

Tstg

−65 to

+175

°C

Operating Junction Temperature (Note 1)

TJ

−65 to

+175

°C

Peak Surge Junction Temperature

(Forward Current Applied)

TJ(pk)

175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dPD/dTJ < 1/RqJA.

http://onsemi.com

TO−220AB

CASE 221A

STYLE 6

3

4

1

SCHOTTKY BARRIER

RECTIFIER

30 AMPERES

45 VOLTS

3

1

2, 4

2

AYWW

B3045G

AKA

MARKING

DIAGRAMS

A

= Assembly Location

Y

= Year

WW

= Work Week

AKA

= Polarity Designator

G

= Pb−Free Device

I2PAK (TO−262)

CASE 418D

PLASTIC

AYWW

B3045CTG

AKA

3

4

1 2

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

Аналогичный номер детали - MBR3045ST

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MBR3045ST	50Kb / 2P	SWITCHMODE??Power Rectifier
Microsemi Corporation	MBR3045ST	131Kb / 2P	30 AMP SCHOTTKY BARRIER RECTIFIER
Pan Jit International I...	MBR3045ST	52Kb / 2P	SCHOTTKY BARRIER RECTIFIERS
ON Semiconductor	MBR3045ST	106Kb / 5P	SWITCHMODE??Power Rectifier January, 2011 ??Rev. 8
ON Semiconductor	MBR3045ST	94Kb / 5P	Switch?릑ode Power Rectifier September, 2014 ??Rev. 9

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