ESDR0502B datasheet(2/4 Pages) ONSEMI

номер детали	ESDR0502B

подробное описание детали	Transient Voltage Suppressor ESD Protection Diodes with Ultra?묹ow Capacitance

PDF	4 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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ESDR0502B

http://onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

Forward Current

Forward Voltage @ IF

Ppk

Peak Power Dissipation

Capacitance @ VR = 0 and f = 1.0 MHz

Uni−Directional TVS

IPP

VRWM

VC VBR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)

Device

Marking

VRWM

(V)

IR (mA)

@ VRWM

VBR (V)

@ IT

(Note 2)

C (pF),

uni−directional

(Note 3)

C (pF),

bi−directional

(Note 4)

VC (V)

@ IPP = 1 A

(Note 5)

Max

Min

Typ

Max

Typ

Max

Per

IEC61000−

4−2

(Note 6)

ESDR0502B

5.0

1.0

5.8

1.0

0.5

0.9

0.25

0.45

Figures 1

and 2

2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.

3. Uni−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 3; pin 2 to pin 3).

4. Bi−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 2).

5. Surge current waveform per Figure 5.

6. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV contact per IEC 61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV contact per IEC 61000−4−2

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