LMP8645 datasheet(4/16 Pages) NSC

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12V Electrical Characteristics (Note 4)

Unless otherwise specified, all limits guaranteed for at T

A = 25°C, VS=V

+-V-, V+ = 12V, V− = 0V, −2V < V

CM < 76V, Rg= 25kΩ, RL

= 10 M

Ω. Boldface limits apply at the temperature extremes.

Symbol

Parameter

Condition

Min

(Note 6)

Typ

(Note 5)

Max

(Note 6)

Units

Input Offset Voltage

CM = 2.1V

-1

-1.7

1.7

TCV

Input Offset Voltage Drift(Note 7,

Note 9)

CM = 2.1V

μV/°C

Input Bias Current(Note 10)

CM = 2.1V

μA

Input Voltage Noise (Note 9)

f > 10 kHz, R

G = 5 kΩ

120

nV/

SENSE(MAX)

Max Input Sense Voltage(Note 9) V

CM =12V, RG = 5 kΩ

600

Gain A

Adjustable Gain Setting (Note 9)

CM = 12V

100

V/V

Transconductance

CM = 2.1V

200

µA/V

Accuracy

CM = 2.1V

-2

-3.4

3.4

Gm drift (Note 9)

−40°C to 125°C, V

CM =2.1V

140

ppm /°C

PSRR

Power Supply Rejection Ratio

CM =2.1V, 2.7V <V

+ < 12V

CMRR

Common Mode Rejection Ratio

LMP8645HV 2.1V <V

CM < 76V

LMP8645 2.1V <V

CM< 42V

–2V <V

CM < 2V

−3 dB Bandwidth (Note 9)

G = 10 kΩ, CG = 4 pF VSENSE = 400 mV,

L = 30 pF, RL= 1MΩ

860

kHz

G = 25 kΩ, CG = 4 pF, VSENSE = 400 mV,

L = 30 pF, RL= 1MΩ

260

G = 50 kΩ, CG = 4 pF, VSENSE =400 mV,

L = 30 pF, RL= 1MΩ

140

Slew Rate(Note 8, Note 9)

CM = 5V, CG = 4 pF, VSENSE from 100 mV

to 500 mV, C

L = 30 pF, RL=1MΩ

0.6

V/µs

Supply Current

CM = 2.1V

555

765

920

CM = −2V

2200

2900

3110

OUT

Maximum Output Voltage

CM = 12V, RG= 500kΩ

10.2

Minimum Output Voltage

CM = 2.1V

OUT

Output current (Note 9)

Sourcing, V

OUT= 5.25V, Rg= 150kΩ

Sinking, V

OUT= 5.25V, Rg= 150kΩ

LOAD

Max Output Capacitance Load

(Note 9)

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device

is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics

Tables.

Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-

Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T

J(MAX), θJA, and the ambient temperature, TA. The maximum

allowable power dissipation P

DMAX = (TJ(MAX) - TA)/ θJA or the number given in Absolute Maximum Ratings, whichever is lower.

Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating

of the device such that T

J = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ >

Note 5: Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and will also depend

on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.

Note 6: All limits are guaranteed by testing, design, or statistical analysis.

Note 7: Offset voltage temperature drift is determined by dividing the change in V

OS at the temperature extremes by the total temperature change.

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