B

8/99

TNY256

9

BYPASS Voltage .......................................... -0.3 V to 9 V

Storage Temperature ..................................... -65 to 125

°C

°C

°C

3. 1/16" from case for 5 seconds.

DRAIN Voltage ....................................... - 0.3 V to 700 V

Peak DRAIN Current ............................................. 800 mA

EN/UV Voltage ............................................ - 0.3 V to 9 V

EN/UV Current ...................................................... 100 mA

1. All voltages referenced to SOURCE, T

2. Normally limited by internal circuitry.

S1 Open

See Note 1

I

I

V

(MOSFET Not Switching)

See Note 2

-68

-50

-28

-15

-10

-5

1.10

1.45

1.80

-58

-35

215

CONTROL FUNCTIONS

Output

Frequency

Maximum

Duty Cycle

EN/UV Pin Turnoff

Threshold Current

EN/UV Pin

Hysteresis Current

EN/UV Pin

Voltage

EN/UV Short-

Circuit Current

DRAIN

Supply Current

BYPASS Pin

Charge Current

kHz

%

µA

µA

V

µA

µA

µA

mA

mA

Min

Typ

Max

f

OSC

DC

MAX

I

DIS

I

HYS

V

EN

I

ENSC

I

S1

I

S2

I

CH1

I

CH2

Parameter

Symbol

(Unless Otherwise Specified)

See Figure 14

Conditions

130

255

-5.50

-4.10

EN/UV Open

(MOSFET Switching)

See Note 2, 3

T

See Figure 4

Units

SOURCE = 0 V

66

T

T

-52

V

V

-45

V

See Note 4,5

V

See Note 4,5

170

2.70

-40

5.0

Average

Peak-Peak Jitter

115

140

63

69

3.8

6.2

-68

-41

1.85

3.25

-58

-25

300

-3.75

-7.50

-6.00

-2.25

Thermal Impedance: Y Package (

θ

°C/W

(

θ

°C/W

P/G Package:

(

θ

(

θ

°C/W

1. Free standing with no heatsink.

2. Measured at tab closest to plastic interface or source pin.

clad.

THERMAL IMPEDANCE