TPCF8B01 datasheet(3/9 Pages) TOSHIBA

3 / 9 page

TPCF8B01

2009-09-29

Electrical Characteristics (Ta = 25°C)

MOSFET

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = -20 V, VGS = 0 V

⎯

-10

μA

V (BR) DSS

ID = -10 mA, VGS = 0 V

-20

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = -10 mA, VGS = 8V

-12

⎯

Gate threshold voltage

Vth

VDS = -10 V, ID = -200 μA

-0.5

⎯

-1.2

RDS (ON)

VGS = -1.8 V, ID = -0.7 A

⎯

215

300

RDS (ON)

VGS = -2.5 V, ID = -1.4A

⎯

110

160

Drain-source ON resistance

RDS (ON)

VGS = -4.5 V, ID = -1.4 A

⎯

110

Forward transfer admittance

|Yfs|

VDS = -10 V, ID = -1.4 A

2.4

4.7

⎯

Input capacitance

Ciss

⎯

470

⎯

Reverse transfer capacitance

Crss

⎯

Output capacitance

Coss

VDS = -10 V, VGS = 0 V, f = 1 MHz

⎯

Rise time

⎯

Turn-on time

ton

⎯

Fall time

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge

Qgs

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− -16 V, VGS = -5 V,

ID = -2.7 A

⎯

MOSFET Source-Drain Ratings and Characteristics

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

-10.8

Forward voltage (diode)

VDSF

IDR = -2.7 A, VGS = 0 V

⎯

-1.2

SBD

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

VFM(1)

IFM = 0.7 A

⎯

0.43

⎯

Peak forward voltage

VFM(2)

IFM = 1.0 A

⎯

0.46

0.49

Repetitive peak reverse current

IRRM

VRRM = 20 V

⎯

μA

Junction capacitance

VR = 10 V, f = 1 MHz

⎯

VDD ∼− -10 V

-5 V

VGS

0 V

ID = -1.4 A

VOUT

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