TPCF8A01

2007-01-16

2

Thermal Characteristics for MOSFET and SBD

Characteristics

Symbol

Max

Unit

Single-device operation

(Note 3a)

92.6

Thermal resistance,

channel to ambient

(t

= 5 s)

(Note 2a) Single-device value at

dual operation (Note 3b)

111.6

°C/W

Single-device operation

(Note 3a)

235.8

Thermal resistance,

channel to ambient

(t

= 5 s)

(Note 2b) Single-device value at

dual operation (Note 3b)

378.8

°C/W

This transistor is an electrostatic-sensitive device. Please handle with caution.

Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products. This

current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward

and reverse loss into consideration during design.

Marking (Note 7)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

Note 3: a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.).

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.).

Note 5: Repetitive rating: pulse width limited by maximum channel temperature

Note 6: Rectangular waveform (α=180

Note 7: ●on the lower left of the marking indicates Pin 1.

FR-4

25.4

× 25.4 × 0.8

(unit: mm)

(b)

FR-4

25.4

× 25.4 × 0.8

(unit: mm)

(a)

25.4

Part No.

(or abbreviation code)

F7A

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot code (month)

Lot No.

Pin #1

Lot code

(year)

Product-specific code