DG508AMYSLASHPR datasheet(2/9 Pages) MAXIM

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Monolithic CMOS Analog Multiplexers

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ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(V+ = 15V, V- = -15V, VGND = 0V, TA = +25°C, unless otherwise noted.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

Voltage Referenced to V-

V+ .....................................................................................+44V

GND ................................................................................. +25V

Digital Inputs, VS and VD (Note 1)...................-2V to (V+ + 2V)

or 20mA, whichever occurs first

Current (any terminal, except S or D) .................................30mA

Continuous Current, S or D .................................................20mA

Peak Current, S or D (pulsed at 1ms, 10% duty cycle max) ..40mA

Continuous Power Dissipation (TA = +70°C)

Plastic DIP (derate 10.53mW/°C above +70°C) ...........842mW

Narrow SO (derate 8.70mWI°C above +70°C) .............696mW

Wide SO (derate 9.52mW/°C above +70°C).................762mW

CERDIP (derate 10.00mW/°C above +70°C) ................800mW

Operating Temperature Ranges:

DG50_ACJ/CWE ..................................................0°C to +70°C

DG50_ABK........................................................-20°C to +85°C

DG50_ADJ/DY/EWE..........................................-40°C to +85°C

DG50_AAK/MY ...............................................-55°C to +125°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

Soldering Temperature (reflow)

PDIP, Wide SO, Narrow SO, CERDIP containing lead(Pb)..+240°C

PDIP, Wide SO, Narrow SO lead(Pb)-free ....................+260°C

Note 1: Signals on S_ or D_ exceeding V+ or V- are clamped by internal diodes. Limit forward-diode current to maximum current ratings

DG508AA/M

DG509AA/M

DG508AD/E/B/C

DG509AD/E/B/C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

SWITCH

Analog Signal

VANALOG

-15

+15

-15

+15

VD = 10V,

IS = -200μA

170

400

170

450

Drain-Source On-

Resistance

RDS(ON)

Sequence each

switch on,

VA_L = 0.8V,

VA_H = 2.4V (Note 4)

VD = -10V,

IS = 200μA

130

400

130

450

Greatest Change

in Drain-Source

On-Resistance

Between Channels

RDS(ON)

RDS(ON) max RDS(ON) min

RDS(ON)

-10V

10V

VS = 10V, VD = -10V

0.002

0.5

0.002

Source Off-

Leakage Current

IS(OFF)

VEN = 0V

VS = -10V, VD = 10V

-0.5

-0.005

-1

-0.005

VD = 10V, VS = -10V

0.01

DG508A

VD = -10V, VS = 10V

-2

-0.015

-5

-0.015

VD = 10V, VS = -10V

0.005

Drain Off-

Leakage

Current

DG509A

ID(OFF)

VEN = 0V

VD = -10V, VS = 10V

-2

-0.008

-5

-0.008

VS(all) = VD = 10V

0.015

DG508A

VS(all) = VD = -10V

-2

-0.03

-5

-0.03

VS(all) = VD = 10V

0.007

Drain On-

Leakage

Current

DG509A

ID(ON)

Sequence each

switch on,

VA_L = 0.8V

VA_H = 2.4V

(Note 2)

VS(all) = VD = -10V

-2

-0.015

-5

-0.015

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