TPC6103

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

TPC6103

Notebook PC Applications

Portable Equipment Applications

= 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−12

V

−12

V

Gate-source voltage

±8

V

DC

(Note 1)

−5.5

Drain current

Pulse (Note 1)

−22

A

Drain power dissipation

(t

= 5 s)

(Note 2a)

2.2

W

Drain power dissipation

(t

= 5 s)

(Note 2b)

0.7

W

Single pulse avalanche energy

(Note 3)

5.3

mJ

Avalanche current

−2.75

A

Repetitive avalanche energy (Note 4)

0.22

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to

ambient (t

= 5 s)

(Note 2a)

56.8

°C/W

Thermal resistance, channel to

ambient (t

= 5 s)

(Note 2b)

178.5

°C/W

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1A

Weight: 0.011 g (typ.)

6

4

1

2

3

5