PSMN014-40YS_1

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Objective data sheet

Rev. 01 — 18 February 2010

7 of 15

NXP Semiconductors

PSMN014-40YS

N-channel LFPAK 40 V, 14 m

Ω standard level MOSFET

Source-drain diode

source-drain voltage

-0.8

1.2

V

reverse recovery time

-22

-

ns

recovered charge

-

17

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

Fig 8.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aad309

0

5

10

15

20

0

5

10

15

20

25

(S)

003aad304

0

10

20

30

40

50

60

024

68

(A)

°C

°C

003aad308

400

600

800

1000

1200

0

5

10

15

20

25

C

(pF)

003aad310

0

10

20

30

40

510

15

20

(m

Ω)