PMST3906_5

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 05 — 29 April 2009

2 of 10

NXP Semiconductors

PMST3906

40 V, 200 mA PNP switching transistor

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PMST3906

SC-70

plastic surface-mounted package; 3 leads

SOT323

Table 4.

Marking codes

Type number

Marking code[1]

PMST3906

*2A

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

−40

V

collector-emitter voltage

open base

-

−40

V

emitter-base voltage

open collector

-

−6V

collector current

-

−200

mA

peak collector current

single pulse;

-

−200

mA

peak base current

single pulse;

-

−100

mA

total power dissipation

[1] -

200

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction

to ambient

in free air

[1] -

-

625

K/W