PMD2001D datasheet(9/15 Pages) NXP

9 / 15 page

PMD2001D_2

Product data sheet

Rev. 02 — 28 August 2009

9 of 15

NXP Semiconductors

PMD2001D

MOSFET driver

VCE = −5V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 11. TR2 (PNP): DC current gain as a function of

collector current; typical values

Fig 12. TR2 (PNP): Collector current as a function of

collector-emitter voltage; typical values

VCE = −5V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 13. TR2 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 14. TR2 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

006aaa778

100

200

300

hFE

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

VCE (V)

−10

−8

−4

−6

−2

006aaa783

−0.4

−0.8

−1.2

(A)

IB (mA) =

−25

−22.5

−20

−17.5

−15

−10

−7.5

−5

−2.5

−12.5

006aaa779

−0.6

−0.8

−0.4

−1.0

−1.2

VBE

(V)

−0.2

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

006aaa782

−0.6

−0.8

−0.4

−1.0

−1.2

VBEsat

(V)

−0.2

IC (mA)

−10−1

−103

−1

−102

−10

(1)

(2)

(3)

PMD2001D датащи(PDF) 9 Page - NXP Semiconductors

PMD2001D датащи(HTML) 9 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

датащи скачать

ссылки URL