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ZVP2120G датащи(PDF) 2 Page - Zetex Semiconductors

номер детали ZVP2120G
подробное описание детали  P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
PDF  3 Pages
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производитель  ZETEX [Zetex Semiconductors]
домашняя страница  http://www.diodes.com/
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ZVP2120G датащи(HTML) 2 Page - Zetex Semiconductors

  ZVP2120G Datasheet HTML 1Page - Zetex Semiconductors ZVP2120G Datasheet HTML 2Page - Zetex Semiconductors ZVP2120G Datasheet HTML 3Page - Zetex Semiconductors  
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TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
Transfer Characteristics
Normalised RDS(on) and VGS(th) vs Temperature
-40 -20
0
20 40 60 80
120
100
140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urc
e R
es
ista
nc
e
RDS(
on
)
Gate Threshold Vo
ltage VGS
(th)
ID=-0.1A
0-2
-4
-6
-8
-10
0
-20
-40
-60
-80
-100
Saturation Characteristics
-14
-12
-10
-6
-2
0
-4
-8
-16
-18
0
-2
-4
-6
-8
-10
-20
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
-5V
-4V
-10V
-5V
ID=
-
300mA
-200mA
-100mA
VGS-Gate Source Voltage (Volts)
VGS=-10V
ID=-1mA
VGS=VDS
-0.6
-0.4
0
-0.2
2.6
180
VGS=
-10V
-7V
-4.5V
-6V
-7V
-4V
-3.5V
-8V
VGS=
-8V
VDS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
-1
-10
100
50
-20
ID=
-300mA
-200mA
-I00mA
-6V
-4.5V
-3.5V
-0.4
-0.3
-0.1
0
-0.2
-50mA
0-2
-4
-6
-8
-10
-10V
-0.6
-0.4
0
-0.2
VDS=
-25V
-50mA
10
T-Temperature (°C)
TYPICAL CHARACTERISTICS
Transconductance v drain current
ID- Drain Current (Amps)
0
-0.2
-0.4
-0.6
-0.8
0
Q-Charge (nC)
0
VDS=-25V
Transconductance v gate-source voltage
VGS-Gate Source Voltage (Volts)
0
0-2
-4
-6
-8
-10
VDS=-25V
0-10
-20
-30
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
Coss
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
VDS=
-50V
ID=- 0.4A
-100V -180V
-40
-50
0.2 0.4 0.6 0.8 1.0 1.2
80
60
40
20
100
180
160
140
120
200
80
60
40
20
100
180
160
140
120
200
40
20
60
Ciss
Crss
80
100
1.4 1.6 1.8 2.0 2.2 2.4
ZVP2120G
ZVP2120G
3 - 432
3 - 433



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