PEMD15 datasheet(6/10 Pages) NXP

номер детали	PEMD15

подробное описание детали	NPN/PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 4.7 kW

PDF	10 Pages

Scroll/Zoom	100%

производитель	NXP [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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6 / 10 page

PEMD15_PUMD15_3

Product data sheet

Rev. 03 — 2 September 2009

6 of 10

NXP Semiconductors

PEMD15; PUMD15

NPN/PNP resistor-equipped transistors; R1 = 4.7 k

Ω, R2 = 4.7 kΩ

VCE = −5V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

Fig 5.

TR2 (PNP): DC current gain as a function of

collector current; typical values

Fig 6.

TR2 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

VCE = −0.3 V

(1) Tamb = −40 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

VCE = −5V

(1) Tamb = −40 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR2 (PNP): On-state input voltage as a

function of collector current; typical values

Fig 8.

TR2 (PNP): Off-state input voltage as a

function of collector current; typical values

IC (mA)

−10−1

−102

−10

−1

006aaa213

102

103

hFE

(1)

(2)

(3)

IC (mA)

−1

−102

−10

006aaa214

−10−1

−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

006aaa215

IC (mA)

−10−1

−102

−10

−1

−10

VI(on)

(V)

−10−1

(1)

(3)

(2)

006aaa216

IC (mA)

−10−2

−10

−1

−10−1

−1

−10

VI(off)

(V)

−10−1

(1)

(3)

(2)

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