2003 Oct 08

4

NXP Semiconductors

Product data sheet

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = 47 kΩ

PEMD13; PUMD13

THERMAL CHARACTERISTICS

Notes

1.

Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

2.

Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

thermal resistance from junction to ambient

SOT363

note 1

625

K/W

SOT666

notes 1 and 2

625

K/W

Per device

thermal resistance from junction to ambient

SOT363

note 1

416

K/W

SOT666

notes 1 and 2

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

collector-base cut-off current

−

−

100

nA

collector-emitter cut-off current

−

−

1

μA

−

−

50

μA

emitter-base cut-off current

−

−

170

μA

DC current gain

100

−

−

collector-emitter saturation voltage

−

−

100

mV

input-off voltage

−

0.6

0.5

V

input-on voltage

1.3

0.9

−

V

R1

input resistor

3.3

4.7

6.1

k

Ω

resistor ratio

8

10

12

collector capacitance

TR1 (NPN)

−

−

2.5

pF

TR2 (PNP)

−

−

3

pF

R2

R1

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