PUMB13 datasheet(4/8 Pages) NXP

номер детали	PUMB13

подробное описание детали	PNP/PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

PDF	8 Pages

Scroll/Zoom	100%

производитель	NXP [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 8 page

2004 Apr 15

NXP Semiconductors

Product data sheet

PNP/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = 47 kΩ

PEMB13; PUMB13

THERMAL CHARACTERISTICS

Notes

Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

Rth j-a

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

625

K/W

SOT666

notes 1 and 2

625

K/W

Per device

Rth j-a

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

416

K/W

SOT666

note 1

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −50 V; IE = 0

−

−100

ICEO

collector-emitter cut-off current

VCE = −30 V; IB = 0

−

−1

μA

VCE = −30 V; IB = 0; Tj = 150 °C

−

−50

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−170

μA

hFE

DC current gain

VCE = −5 V; IC = −10 mA

100

−

VCEsat

saturation voltage

IC = −5 mA; IB = −0.25 mA

−

−100

Vi(off)

input-off voltage

VCE = −5 V; IC = −100 μA

−

−0.6

−0.5

Vi(on)

input-on voltage

VCE = −0.3 V; IC = −5 mA

−1.3

−0.9

−

input resistor

3.3

4.7

6.1

resistor ratio

collector capacitance

IE = ie = 0; VCB = −10 V;

f = 1 MHz

−

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