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PDTC144V датащи(PDF) 6 Page - NXP Semiconductors

номер детали PDTC144V
подробное описание детали  NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 10 k廓
PDF  11 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

PDTC144V датащи(HTML) 6 Page - NXP Semiconductors

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PDTC144V_SER_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 16 November 2009
6 of 11
NXP Semiconductors
PDTC144V series
NPN resistor-equipped transistors; R1 = 47 k
Ω, R2 = 10 kΩ
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3.
On-state input voltage as a function of
collector current; typical values
Fig 4.
Off-state input voltage as a function of
collector current; typical values
IC (mA)
10−1
102
10
1
006aaa099
102
10
103
hFE
1
(1)
(2)
(3)
IC (mA)
1102
10
006aaa100
10−1
1
VCEsat
(V)
10−2
(1)
(3)
(2)
006aaa101
IC (mA)
10−1
102
10
1
10
VI(on)
(V)
1
(1)
(2)
(3)
006aaa102
IC (mA)
10−1
10
1
10
VI(off)
(V)
1
(1)
(2)
(3)



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