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PDTC144T датащи(PDF) 2 Page - NXP Semiconductors |
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PDTC144T датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 14 page ![]() 2004 Aug 17 2 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 47 k Ω, R2 = open PDTC144T series FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage − 50 V IO output current (DC) − 100 mA R1 bias resistor 47 − k Ω R2 open − − − PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE PNP COMPLEMENT PHILIPS EIAJ PDTC144TE SOT416 SC-75 43 PDTA144TE PDTC144TEF SOT490 SC-89 33 PDTA144TEF PDTC144TK SOT346 SC-59 53 PDTA144TK PDTC144TM SOT883 SC-101 E4 PDTA144TM PDTC144TS SOT54 (TO-92) SC-43 TC144T PDTA144TS PDTC144TT SOT23 − *41(1) PDTA144TT PDTC144TU SOT323 SC-70 *41(1) PDTA144TU |
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