2004 Aug 05

2

NXP Semiconductors

Product data sheet

NPN resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = 4.7 kΩ

PDTC143E series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

NPN resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

collector-emitter

voltage

−

50

V

output current (DC)

−

100

mA

R1

bias resistor

4.7

−

k

Ω

R2

bias resistor

4.7

−

k

Ω

PRODUCT OVERVIEW

Note

1.

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER

PACKAGE

MARKING CODE(1)

PNP COMPLEMENT

PHILIPS

EIAJ

PDTC143EE

SOT416

SC-75

02

PDTA143EE

PDTC143EEF

SOT490

SC-89

51

PDTA143EEF

PDTC143EK

SOT346

SC-59

02

PDTA143EK

PDTC143EM

SOT883

SC-101

E1

PDTA143EM

PDTC143ES

SOT54 (TO-92)

SC-43

TC143E

PDTA143ES

PDTC143ET

SOT23

−

*02

PDTA143ET

PDTC143EU

SOT323

SC-70

*02

PDTA143EU