PDTC115ES datasheet(5/14 Pages) NXP

номер детали	PDTC115ES

подробное описание детали	NPN resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

PDF	14 Pages

Scroll/Zoom	100%

производитель	NXP [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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5 / 14 page

2004 Aug 06

NXP Semiconductors

Product data sheet

NPN resistor-equipped transistors;

R1 = 100 k

Ω, R2 = 100 kΩ

PDTC115E series

THERMAL CHARACTERISTICS

Notes

Refer to standard mounting conditions.

Reflow soldering is the only recommended soldering method.

Refer to SOT883 standard mounting conditions; FR4 with 60

μm copper strip line.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

in free air

SOT54

note 1

250

K/W

SOT23

note 1

500

K/W

SOT346

note 1

500

K/W

SOT323

note 1

625

K/W

SOT416

note 1

833

K/W

SOT833

notes 2 and 3

500

K/W

SOT490

notes 1 and 2

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 50 V; IE = 0 A

−

100

ICEO

collector-emitter cut-off current

VCE = 30 V; IB = 0 A

−

μA

VCE = 30 V; IB = 0 A; Tj = 150 °C

−

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0 A

−

μA

hFE

DC current gain

VCE = 5 V; IC = 5 mA

−

VCEsat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA

−

150

Vi(off)

input-off voltage

IC = 100 μA; VCE = 5 V

−

1.1

0.5

Vi(on)

input-on voltage

IC = 1 mA; VCE = 0.3 V

1.5

−

input resistor

100

130

resistor ratio

0.8

1.2

collector capacitance

IE = ie = 0 A; VCB = 10 V;

f = 1 MHz

−

2.5

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