PBLS6022D datasheet(8/16 Pages) NXP

номер детали	PBLS6022D

подробное описание детали	60 V, 1.5 A PNP BISS loadswitch

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производитель	NXP [NXP Semiconductors]

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8 / 16 page

PBLS6022D_1

Product data sheet

Rev. 01 — 13 August 2009

8 of 16

NXP Semiconductors

PBLS6022D

60 V, 1.5 A PNP BISS loadswitch

VCE = −2V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 5.

TR1 (PNP): DC current gain as a function of

collector current; typical values

Fig 6.

TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

VCE = −2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 8.

TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

006aab523

200

400

600

hFE

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

VCE (V)

0.0

−2.0

−1.5

−0.5

−1.0

006aab524

−1

−2

−3

(A)

IB (mA) = −30

−27

−21

−18

−15

−12

−9

−24

−6

−3

006aab525

−0.6

−0.8

−0.4

−1.0

−1.2

VBE

(V)

−0.2

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

006aab526

−0.6

−0.8

−0.4

−1.0

−1.2

VBEsat

(V)

−0.2

IC (mA)

−10−1

−104

−103

−1

−102

−10

(1)

(2)

(3)

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