PBLS4002V datasheet(5/11 Pages) NXP

номер детали	PBLS4002V

подробное описание детали	40 V PNP BISS loadswitch

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производитель	NXP [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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5 / 11 page

PBLS4002Y_PBLS4002V_3

Product data sheet

Rev. 03 — 12 February 2009

5 of 11

NXP Semiconductors

PBLS4002Y; PBLS4002V

40 V PNP BISS loadswitch

VCE = −2V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 1.

TR1 (PNP): DC current gain as a function of

collector current; typical values

Fig 2.

TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

VCE = −2V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 3.

TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 4.

TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

006aaa388

200

400

600

hFE

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

VCE (V)

−5

−4

−2

−3

−1

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−0.4

−0.6

−0.2

−0.8

−1

(A)

IB (mA) = −30

−3

−6

−9

−12

−15

−27

−24

−21

−18

006aaa389

−0.5

−0.7

−0.3

−0.9

−1.1

VBE

(V)

− 0.1

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

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−0.5

−0.7

−0.3

−0.9

−1.1

VBEsat

(V)

−0.1

IC (mA)

−10−1

−103

−102

−1

−10

(1)

(2)

(3)

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