PBLS4002Y datasheet(4/11 Pages) NXP

4 / 11 page

PBLS4002Y_PBLS4002V_3

Product data sheet

Rev. 03 — 12 February 2009

4 of 11

NXP Semiconductors

PBLS4002Y; PBLS4002V

40 V PNP BISS loadswitch

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low VCEsat transistor

ICBO

collector-base cut-off

current

VCB = −40 V; IE =0A

−100 nA

VCB = −40 V; IE =0A;

Tj = 150 °C

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−100 nA

hFE

DC current gain

VCE = −2 V; IC = −10 mA

200

VCE = −2 V; IC = −100 mA

[1] 150

VCE = −2 V; IC = −500 mA

[1] 40

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

−50

IC = −100 mA; IB = −5mA

−130 mV

IC = −200 mA; IB = −10 mA

−200 mV

IC = −500 mA; IB = −50 mA

[1] --

−350 mV

RCEsat

collector-emitter

saturation resistance

IC = −500 mA; IB = −50 mA

[1] -

440

700

Ω

VBEsat

base-emitter

saturation voltage

IC = −500 mA; IB = −50 mA

[1] --

−1.2

VBEon

base-emitter

turn-on voltage

VCE = −2 V; IC = −100 mA

[1] --

−1.1

transition frequency

IC = −100 mA; VCE = −5V;

f = 100 MHz

100

300

MHz

collector capacitance

VCB = −10 V; IE =ie =0A;

f=1MHz

--10

TR2; NPN resistor-equipped transistor

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE =30V; IB = 0 A

--1

µA

VCE =30V; IB =0A;

Tj = 150 °C

--50

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

900

µA

hFE

DC current gain

VCE =5V; IC =10mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input voltage

VCE =5V; IC = 100 µA

1.1

0.5

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 20 mA

2.5

1.9

bias resistor 1 (input)

3.3

4.7

6.1

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

2.5

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