PCIMX258CJM4A datasheet(21/144 Pages) FREESCALE

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i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 3

Freescale Semiconductor

3.5.1.2

DDR_TYPE = 01 SDRAM I/O DC Parameters

Table 16 shows the DC I/O parameters for SDRAM.

Note:

1. Simulation circuit for parameters Voh and Vol for I/O cells is below

2. Minimum condition: bcs model, OVDD = 3.6 V, and –40 °C. Typical condition: typical model, OVDD = 3.3 V, and 25 °C.

Maximum condition: wcs model, OVDD = 3.0 V, and 105 °C.

3. Typical condition: typical model, OVDD = 3.3 V, and 25 °C. Maximum condition: bcs model, OVDD = 3.6 V, and 105 °C.

3.5.1.3

DDR_TYPE = 10 Max Setting DDR I/O DC Parameters

Table 17 shows the I/O parameters for DDR2 (SSTL_18).

Table 16. SDRAM DC Electrical Characteristics

DC Electrical Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Notes

High-level output voltage

Voh

Ioh = Specified Drive

(Ioh = –4, –8, –12,

–16mA)

2.4

—

Low-level output voltage

Vol

Ioh = Specified Drive

(Ioh = 4, 8, 12, 16mA)

——

0.4

High-level output current

Ioh

Standard Drive

High Drive

Max. Drive

–4.0

–8.0

–12.0

——

—

Low-level output current

Iol

Standard Drive

High Drive

Max. Drive

4.0

8.0

12.0

——

—

High-level DC input voltage

VIH

—

2.0

—

3.6

—

Low-level DC input voltage

VIL

—

–0.3 V

—

0.8

Input current (no pull-up/down)

IIN

VI = 0

VI = OVDD

——

150

2, 3

High-impedance I/O supply current

Icc-ovdd

VI = OVDD or 0

—

1180

2, 3

High-impedance core supply

current

Icc-vddi

VI = VDD or 0

—

1220

Table 17. DDR2 (SSTL_18) I/O DC Electrical Characteristics

DC Electrical Characteristics

Symbol

Test

Conditions

Min.

Typ.

Max.

Units

Notes

High-level output voltage

Voh

—

OVDD – 0.28

—

Low-level output voltage

Vol

—

0.28

Output min. source current

IIoh

—

–13.4

—

Output min. sink current

IIol

—

13.4

—

DC input logic high

VIH(dc)

—

OVDD/2 + 0.125

—

OVDD + 0.3

—

DC input logic low

VIL(dc)

—

–0.3 V

—

OVDD/2 – 0.125

—

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